Low Price Monocrystalline Silicon Ingots Cutting Silicon Ingots

FOB Reference Price:Get Latest Price
$100.00 - $250.00 / Kilograms | 20 Kilogram/Kilograms (Min. Order)
Lead Time:
Quantity(Kilograms) 1 - 100 >100
Est. Time(days) 15 Negotiable
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Overview
Quick Details
Place of Origin:
Other, CN;ANH
Brand Name:
YISEMI
Model Number:
P/N
Size:
2/3/4/5/6/8/12 Inch
Grade:
99.999999999%
Type:
N/P
Color:
gray
Application:
Semiconductor
Certification:
ISO9001
Material:
Monocrystalline Silicon
Advantage:
large size/high quality/low price/customerization
Weight:
1-500kg
Growth method:
Cz
Supply Ability
Supply Ability:
1000 Kilogram/Kilograms per Month
Packaging & Delivery
Packaging Details
factory si ingot packed by customized wooden box filled with polystyrene foam
Port
Shanghai
Lead Time :
Quantity(Kilograms) 1 - 100 >100
Est. Time(days) 15 To be negotiated
Our Company

Anhui Yixin Semiconductor Co.,Ltd, founded in Sep, 2016, is located in Xinzhan Hi-tech District in Hefei in Anhui province, mainly engaged in the large size of semiconductor silicon crystal and silicon wafer and research, production, sales and technical service of automatic silicon crystal growth furnace. It is a member of China Semiconductor Industry Association,  China Electronics Materials Industry Association and Hefei Semiconductor Industry Association.

Product Description

We use the Czochralski (CZ) method to grow both p-type and n-type dislocation-free silicon ingots with <100>, <111> or <110> orientation. The diameters of the ingots are 100mm, 125mm, 150mm, 200mm, 300mm and 400mm. The dopant types used, and the matching resistivity ranges for each dopant are listed in the product tables. For the p-type boron doped ingots, the lowest resistivity that can be obtained for an ingot is 0.0006 ohm.cm. For an n-type ingot, the lowest resistivity that can be obtained by doping with red-phosphorus is 0.0011 ohm.cm. To ensure high gettering ability and mechanical strength, the oxygen contents of the ingots are regulated. We also pay special attention to improve radial uniformity and to minimize the as-grown defects, such as COP, swirl and dislocation loops in an ingot.

Type
Dopant
Diameter(mm)
Resistivity Range(ohm.cm)
P
Boron
100/125/150/200/300/400
0.0006~200
N
Phosphorus
100/125/150/200/300/400
0.0011~60
N
Arsenic
100/125/150/200/300/400
0.0020~0.01
N
Antimony
100/125/150/200/300/400
0.0088~0.03

Other parameters are negotiable, such as length(>150mm), oxygen content, carbon content, cop.

 silicon ingot
silicon ingot
 silicon ingot
silicon ingot
Product Show
Certifications
Packing & Delivery

Packing

We use wooden box filled with foam to pack every ingot.

Delivery

We will send the goods by International Express like Fedex, UPS or according your requirement.

FAQ

Q: Could I get samples?
A: We can send samples free and samples need to be charged if the value is higher and welcome you to visit our factory any time.

Q: How about the shipping?
A: We will send the goods by International Express like Fedex, UPS or according your requirement.
Usually it takes 3 -5 work days to arrive.

Q: When could you deliver the goods?
A: Within 4 weeks after your payment

Q: What's your payment term?
A: T/T, 100% in advance(negotiable).

Q. What's your main products?
A: There are silicon ingot(4-16 inch), silicon wafer (4-12 inch), silicon crystal growth furnace and silicon crystal growth control system.

Q. Are you a trading company or a factory?
A: We are a professional factory and our products are very popular both in domestic and abroad.


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